Sharp vertices in asymmetric Y-junctions by double masking
- 1 February 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (2) , 249-251
- https://doi.org/10.1109/68.275440
Abstract
A novel fabrication procedure is presented for the realization of sharp vertices in Y-junctions on InGaAsP/InP. Overlapping masking layers of silica and resist respectively define the two branches in the junction. A nearly perfect branching point is made by a reactive ion etch with two overlapping mask strips. An asymmetric Y-junction designed to function as a mode splitter is realized with this technique. It shows an improvement of 4-8 dB in mode splitting over a version made with a single masking layer. This agrees with BPM-simulations on the effect of blunting in these Y-junctions.Keywords
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