Polarized hot-electron photoluminescence in highly doped GaAs

Circularly polarized hot-electron photoluminescence was measured for highly doped GaAs ($N_A$≃${10}^{19}$ ${\mathrm{cm}}^{\mathrm{-}3}$) at T=2, 77, and 300 K for excitation energies in the range 1.55≤$E_{\mathrm{ex}\mathrm{\le }2.60}$ eV. The influence of non-k-conserving optical transitions was discussed in this heavily doped system and the initial polarization of luminescence for this process was calculated. Comparison with the experimental data suggests that the optical transitions involved are mostly vertical.