An efficient method for cleaning Ge(100) surface
- 1 September 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 316 (1-2) , L1031-L1033
- https://doi.org/10.1016/0039-6028(94)91117-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaningJournal of Vacuum Science & Technology A, 1993
- Optical properties of strained GeSi superlattices grown on (001)GeThin Solid Films, 1989
- Photoelectron spectroscopy of surface states on semiconductor surfacesSurface Science Reports, 1988
- Electronic structure of the Ge(111)-c(2×8) surfacePhysical Review B, 1988
- Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001)Applied Physics Letters, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Determination of atomic steps at argon ion bombarded Ge(100) surfacesSurface Science, 1978