Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells
- 15 December 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (12) , 5964-5969
- https://doi.org/10.1063/1.351905
Abstract
Using a computer simulation, the effects of abrupt and graded a-Si:C:H/a-Si:H interfaces on the performance of a-Si:H p-i-n solar cells are discussed. It is shown that structures with graded heterojunction transitions possess much lower recombination near the junction and a higher accelerating built-in electric field in the i layer, both of which increase the open-circuit voltage and improve the solar cell fill factor.This publication has 2 references indexed in Scilit:
- Transport equations for highly doped devices and heterostructuresSolid-State Electronics, 1987
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952