Performance of Ga1−xAlxAs light emitting diodes in radiation environments
- 1 December 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 21 (6) , 96-102
- https://doi.org/10.1109/tns.1974.6498911
Abstract
Addition of aluminum as a cation substituent in GaAs improves the relative radiation hardness of the GaAs light emitting diode, as deduced from both gamma and neutron irradiation experiments to 10 8 rads (Si) and 3.5&time;10 13 neutrons/cm 2 , respectively. The gamma damage coefficient, K y , shows a marked and unexpected decrease from 52 (rads (Si) .s) −1 to ∼ 2 (rads(Si) .s)−1 in the composition range from GaAs to ∼ Ga .90 Al 10 AS. Above 10 percent Al content, the damage coefficient changes only slightly. On the other hand, the neutron damage coefficient K n shows a gradual change over the entire compositional range from 0 to 34 percent aluminum. Annealing of the gamma-irradiated samples indicates that the 240° C stage noted for GaAs and attributed to an arsenic vacancy is reduced with addition of aluminum. On the other hand the annealing of the Ga 1−x Al x As samples following neutron irradiation indicates that the annealing characteristics are virtually independent of the aluminum composition. For both types of irradiation there is a shift of the peak emission wavelength to shorter wavelengths following irradiation.Keywords
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