Sputter deposition of YBa2Cu3O7−x films using a hemispherical target in a Hg vapor triode plasma
- 4 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1187-1189
- https://doi.org/10.1063/1.99671
Abstract
High‐quality stoichiometric films of YBa2 Cu3 O7−x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal‐state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.Keywords
This publication has 10 references indexed in Scilit:
- Low-temperature process for the preparation of high T c superconducting thin filmsApplied Physics Letters, 1987
- Magnetron sputtering and laser patterning of high transition temperature Cu oxide filmsApplied Physics Letters, 1987
- Growth of high T c superconducting thin films using molecular beam epitaxy techniquesApplied Physics Letters, 1987
- Critical current densities and transport in superconducting YBa2Cu3O7−δ films made by electron beam coevaporationApplied Physics Letters, 1987
- Quantum interference devices made from superconducting oxide thin filmsApplied Physics Letters, 1987
- Critical-current measurements in epitaxial films of compoundPhysical Review Letters, 1987
- High superconducting transition temperatures in sputter-deposited YBaCuO thin filmsNature, 1987
- Mass effects on angular distribution of sputtered atomsJournal of Applied Physics, 1979
- Atom Ejection Patterns in Single-Crystal SputteringJournal of Applied Physics, 1960
- Sputtering Yields for Normally Incident-Ion Bombardment at Low Ion EnergyPhysical Review B, 1957