Homoepitaxial SiC Growth by Molecular Beam Epitaxy

• 1 July 1997
• journal article
• research article
• Published by Wiley in Physica Status Solidi (b)
• Vol. 202  (1) , 379-404
• https://doi.org/10.1002/1521-3951(199707)202:1<379::aid-pssb379>3.0.co;2-2

Abstract

Keywords

• NITROGEN
• FILMS
• BEAM
• SIC
• EPITAXY
• DOPED
• HOMOEPITAXIAL
• EPILAYERS