The effect of velocity saturation on the shape of the current signals in silicon detectors
- 1 January 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 311 (3) , 573-579
- https://doi.org/10.1016/0168-9002(92)90657-p
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Processing the signals from solid-state detectors in elementary-particle physicsLa Rivista del Nuovo Cimento, 1986
- Silicon photodiode detection of bismuth germanate scintillation lightNuclear Instruments and Methods in Physics Research, 1984
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Extension of Ramo's theorem as applied to induced charge in semiconductor detectorsNuclear Instruments and Methods, 1971
- On the information available from the rise-time of the charge pulse supplied by semiconductor particle detectorsNuclear Instruments and Methods, 1965
- Influence of non-constant carrier mobility on the charge transport time in semiconductor detectorsNuclear Instruments and Methods, 1965
- Pulse formation and transit time of charge carriers in semiconductor junction detectorsNuclear Instruments and Methods, 1964
- On the induced charge in semiconductor detectorsNuclear Instruments and Methods, 1963
- Transit time of charge carriers in the semiconductor ionization chamberNuclear Instruments and Methods, 1961
- Amplitude and Time Measurement in Nuclear PhysicsPublished by Elsevier ,1956