Proposal for a new submicron dimension reference for an electron beam metrology system

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Abstract
A new submicron level reference for an electron beam metrology system is proposed. This reference is a fine rectangular-profile diffraction grating fabricated by laser interferometer lithography and anisotropic chemical etching of (110) crystalline silicon. The pitch size of the grating is derived from the wavelength of the laser and the angle of incidence of the holographic lithography. The optical diffraction measurement absolutely assures accurate grating pitch size. The measurement error is estimated to be smaller than 0.001 μm. A deep lamellar grating fabricated by anisotropic chemical etching of (110)Si generates a stable and high-contrast secondary electron signal in an electron beam metrology system. Reference pitch size measurement by optical diffraction and by the electron beam metrology system assures that the pitch size error is smaller than 0.02 μm.

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