A New Route to the Deposition of Al2O3 by MOCVD
- 1 June 1995
- journal article
- Published by EDP Sciences in Journal de Physique IV
- Vol. 05 (C5) , C5-557
- https://doi.org/10.1051/jphyscol:1995566
Abstract
Thin films of aluminium oxide, Al2O3, have been deposited by atmospheric pressure MOCVD using trimethylaluminium (Me3Al) and iso-propanol (Pr'OH) as precursors. The films were deposited over the temperature range 400-600°C and had growth rates of up to 67 Å min-1. Analysis by Auger electron spectroscopy showed that films deposited at 400°C were high purity with carbon contamination < 0.5 at %Keywords
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