Mass and energy dependence of implanted ion profiles in the AZ111 photoresist
- 15 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (4) , 1322-1324
- https://doi.org/10.1063/1.337304
Abstract
Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With the exception of the noble gases and F, the experimental results are well fitted by the Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For the noble gases we obtain ranges up to a factor of 2 shorter than the above predictions. Fluor changes the profile as function of energy, being nearly Gaussian at 30 keV and distributing according to the calculated ionization at 70 keV.This publication has 4 references indexed in Scilit:
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