Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching
- 1 March 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (2) , 567-573
- https://doi.org/10.1116/1.587391
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: