A high efficiency GaAs power amplifier module with a single voltage for digital cellular phone systems
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 443-446
- https://doi.org/10.1109/mwsym.1998.705028
Abstract
This work describes a two-stage 0.2 cc power amplifier (PA) module with single voltage operation for digital cellular phone system terminals. A new GaAs FET structure enables this operation. To increase power-added efficiency, it is found to be advantageous to use heat spreading with a Cu plate in the cavity and second-order harmonic suppression with the trap capacitor built into the drain bias circuit. Output power of 30.5 dBm with power added efficiency of 54% has been obtained at 1.45 GHz and 3.5 V.Keywords
This publication has 3 references indexed in Scilit:
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