Growth of 20 mm diameter GaAs crystals by the floating-zone technique with controlled As-vapour pressure under microgravity
- 1 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 156 (4) , 350-360
- https://doi.org/10.1016/0022-0248(95)00284-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Floating‐zone growth of GaAs under microgravity during the D2‐missionCrystal Research and Technology, 1994
- A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformationJournal of Crystal Growth, 1989
- Substrate-impurities effects on GaAs MESFETsJournal of Electronic Materials, 1988
- Liquid bridge analysis of silicon crystal growth experiments under microgravityJournal of Crystal Growth, 1986
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium ArsenideJournal of the Electrochemical Society, 1962
- Zur Stabilität senkrechter SchmelzzonenZeitschrift für Naturforschung A, 1956