Modulation-doped GaInAs/GaInAsP strained multiple-quantum-well lasers grown by chemical beam epitaxy
- 18 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (3) , 277-279
- https://doi.org/10.1063/1.112371
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Theoretical study on enhanced differential gain and extremely reduced linewidth enhancement factor in quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- Reduction of linewidth enhancement factor in InGaAsP-InP modulation-doped strained multiple-quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- Theoretical analysis of extremely small linewidth enhancement factor and enhanced differential gain in modulation-doped strained quantum-well lasersApplied Physics Letters, 1993
- Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation dopingIEEE Photonics Technology Letters, 1992
- Progress in chemical beam epitaxyJournal of Crystal Growth, 1990
- Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. TheoryJapanese Journal of Applied Physics, 1990
- Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. II. ExperimentJapanese Journal of Applied Physics, 1990
- Linewidth enhancement factor in strained quantum well lasersIEEE Photonics Technology Letters, 1989
- Nature of wavelength chirping in directly modulated semiconductor lasersElectronics Letters, 1984
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982