Jet Polishing of Semiconductors
- 1 January 1972
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 119 (3) , 314-317
- https://doi.org/10.1149/1.2404193
Abstract
Transmission electron microscopy showed that high density networks of tunnels about 300Aå in diameter were formed in {111} foils of thinned by jet electropolishing using a chlorine in methanol solution. These tunnels ran in directions, in the polar sense from the gallium to the phosphorus atom along a chemical bond. They were unrelated to any of the pre‐existing defects in the material that could be seen by transmission electron microscopy.Keywords
This publication has 0 references indexed in Scilit: