Radiative Recombination on Dislocations in Silicon Crystals
- 1 July 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (7) , L537
- https://doi.org/10.1143/jjap.20.l537
Abstract
Photoluminescence spectra in plastically deformed silicon crystals have been measured to investigate the dislocation-induced energy state of electrons in the band gap. Plastic deformation gives rise to four luminescence lines irrespective of the type of conduction of the crystal. The luminescent lights are strongly polarized in the direction parallel to the dislocation line. A phenomenological expression which relates the luminescent intensity with parameters characterizing the dislocations is deduced on the basis of the experimental results.Keywords
This publication has 2 references indexed in Scilit:
- On the nature of the dislocation luminescence in siliconPhysica Status Solidi (b), 1977
- Linearly polarized luminescence from linear defects in natural and synthetic diamondPhilosophical Magazine, 1974