Growth and luminescence properties of Mg‐doped prepared by metal‐organic vapor phase epitaxy, in which or is used as the Mg source gas, are reported for the first time. It was found that the Mg concentration in is proportional to the flow rate of the Mg source gas; the doping efficiency of Mg into is independent of the substrate temperature from 850° to 1040°C; and Mg in acts as an acceptor and forms blue luminescence centers. By using, an efficient near‐UV and blue LED can be fabricated.