Dephasing effects on laser gain in shallow and deep semiconductor quantum dots

Publisher Website

21 March 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 91-92
https://doi.org/10.1109/islc.2004.1382770

Abstract

Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.

Keywords

This publication has 1 reference indexed in Scilit:

Carrier–carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope
Applied Physics Letters, 2003