Growth of giant magnetoresistance spin valves using indium as a surfactant

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Abstract
We have investigated the use of In as a surfactant to achieve smoother interfaces in spin‐valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from ∼0.8 to ∼0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5–1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float‐out to the surface during deposition of the spin valve leaving the spin‐valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 interface can be increased from 12 to 25 mT by the use of thicker In (1.4 nm).