Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systems

25 October 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (22) , 702-703
https://doi.org/10.1049/el:19790499

Abstract

The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 μm wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved.

Keywords

MODULATION BANDWIDTH
HETEROJUNCTION STRUCTURE LED
HIGH BIT RATE OPTICAL COMMUNICATION SYSTEMS
INGAASP-INP:MG
1 GHZ
LIGHT EMITTING DIODES