GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm

26 October 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (22) , 1530-1531
https://doi.org/10.1049/el:19891029

Abstract

Buried-ridge GRIN-SCH quantum-well lasers operating at 1·3 μm with an AlGaInAs continuously graded separate confinement region and with AlGaInAs quantum wells have been demonstrated with CW threshold currents of 65 mA.

Keywords

MQW
BURIED RIDGE LASERS
GRIN-SCH QUANTUM-WELL LASERS
CONTINUOUSLY GRADED SEPARATE-CONFINEMENT REGION
ALGAINAS-INP
1300 NM
QUANTUM WELLS
CW THRESHOLD CURRENTS
65 MA

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