Crystal site location of dopants in semiconductors using a 100-keV electron probe
- 1 September 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5014-5015
- https://doi.org/10.1063/1.332769
Abstract
The channeling effect on electron induced characteristic x‐ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm−3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x‐ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.This publication has 8 references indexed in Scilit:
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