Effect of Carbon on the Lattice Parameter of Silicon
- 1 August 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (9) , 4365-4368
- https://doi.org/10.1063/1.1656977
Abstract
A correlation between the lattice parameter and the carbon concentration in otherwise pure samples of silicon has been observed. Carbon content has been determined by mass spectrometry, infrared, and lattice parameter measurements. Typical values of the carbon concentration are given for some float‐zoned silicon crystals and for a series of intentionally carbon‐doped crystals.This publication has 4 references indexed in Scilit:
- Concerning the carbon content in semiconductor siliconSolid-State Electronics, 1965
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Length Change of Electron-Irradiated GermaniumPhysical Review Letters, 1964
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956