The temperature dependence of the Auger recombination coefficient of undoped silicon

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Abstract
A pulsed Nd:YAG laser ( lambda =1.06 mu m) was used to generate free carriers in an undoped silicon sample. By measuring the incident and the transmitted photon densities the absorption parameters could be determined in situ, which made it possible to determine accurately the carrier density along the laser beam. The recombination radiation was measured through a surface perpendicular to the injection surface, and the effects of surface recombination were therefore eliminated. The recombination radiation was measured as a function of time in the temperature interval 195-372K for several injection levels and it was found that the decay could be described by a combination of Auger recombination and carrier diffusion. These mechanisms could be separated in the analysis. The Auger recombination coefficient was found to be approximately proportional to T0.6, increasing from 3.0*10-31 to 4.6*10-31 cm6s-1 in this temperature interval.

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