Spectral distribution of the spontaneous emission from electron-beam-excited semiconductor lasers using n-type GaAs†

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Abstract
The spectral intensity distribution of the spontaneous omission from semiconductor lasers of n-type GaAs pumped by a 40 kv electron beam is calculated using the theory of recombination statistics. The results obtained are in good agreement with the published data on experiments carried out both at 77°k and 300°K. In particular a hump is obtained in the spectral distribution on the high energy side of the spectrum of the light emitted from n-type GaAs at 77°K when the level of doping is very high. This also is in agreement with the experimental observation reported elsewhere.