Origin of the defects observed after laser annealing of implanted silicon
- 15 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (2) , 159-160
- https://doi.org/10.1063/1.92646
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Calculated temperature distribution during laser annealing in silicon and cadmium tellurideApplied Physics A, 1979
- The depth distribution of phosphorus ions implanted into silicon crystalsRadiation Effects, 1974
- Ion-Implanted Phosphorous in Silicon: Profiles Using C-V AnalysisJournal of Applied Physics, 1971