Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography

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Abstract
This paper describes the development of deep UV resist materials based on chemically amplified crosslinking systems for use in excimer laser photolithography at the KrF lasing wavelength of 248 nm. This work will describe the use of a transparent resin, polyp-vinyl)phenol, which has excellent plasma etch resistance and demonstrates high resolution (sub half-micron line-space pairs for a 1.0 micron thick film) when used in an Advanced Negative Resist (ANR) formulation, XP-8843. Under 140C post-exposure bake conditions, XP-8843 exhibits fast photospeed (15 mJ/cm2), high contrast (4.1), vertical sidewalls, and good process latitude.

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