Record f T and f T + f MAX performance of InP/InGaAs single heterojunction bipolar transistors
- 15 May 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (10) , 811-813
- https://doi.org/10.1049/el:20030534
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 2002