Indium and gallium on Si(001): A closer look at the parallel dimer structure
- 15 March 1999
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (11) , 7644-7648
- https://doi.org/10.1103/physrevb.59.7644
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Aluminum on Si(100): Growth and structure of the first layerJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Ball-milling-induced amorphization incompounds: A parametric studyPhysical Review B, 1993
- Adsorption of Al on Si(100): A surface polymerization reactionPhysical Review Letters, 1993
- Aluminum on the Si(100) surface: Growth of the first monolayerPhysical Review B, 1991
- Evolution of the Si(100)‐2×2‐In reconstructionJournal of Vacuum Science & Technology A, 1991
- Indium-induced reconstructions of the Si(100) surfacePhysical Review B, 1991
- Behavior of gallium on vicinal Si(100) surfacesJournal of Vacuum Science & Technology A, 1990
- Gallium growth and reconstruction on the Si(100) surfaceJournal of Vacuum Science & Technology A, 1990
- Behavior of Ga on Si(100) as studied by scanning tunneling microscopyApplied Physics Letters, 1988
- Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growthSurface Science, 1986