Comparison of a-Si:H produced by rf sputtering and plasma decomposition methods

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Abstract
We investigate the differences between sputter (S) produced and representative plasma decomposition (GD) produced a‐Si:H in electron drift mobility activation energy, photoluminescence temperature quenching and peak energy, optical absorption extended by photoconductivity, and midgap state density from conductance/capacitance measurements. From these property measurements we conclude that for the GD material less modification of the bands occurs for the hydrogenation required to obtain a comparable midgap state density. This density, measured in both materials, is larger than that expected from an extrapolation of the band tails.

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