Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy
- 16 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (20) , 1681-1683
- https://doi.org/10.1063/1.99017
Abstract
Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET’s are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET’s are observed depending on the single‐crystal growth mode. A field‐effect (electron) mobility of about 700 cm2/(V s) was obtained for n‐channel MOSFET’s fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three‐dimensional device structures using a {110} facet grown region.Keywords
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