A New Approach for Low Defect Density GaAs On Patterned Si Substrates by Mocvd
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPEJournal of Crystal Growth, 1991
- Comparison of coolants for achieving short-wavelength recombination lasingJournal of Applied Physics, 1990
- X-ray/VUV transmission gratings for astrophysical and laboratory applicationsPhysica Scripta, 1990
- Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlatticesJournal of Applied Physics, 1988
- Elimination of interface defects in mismatched epilayers by a reduction in growth areaApplied Physics Letters, 1988
- Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1987
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984