Phase stability versus the lattice mismatch of (100)Co1−xGax thin films on (100)GaAs

Abstract
Thin films of the intermetallic compound Co1−xGax, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100)GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined in situ by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined ex situ by x-ray diffraction (XRD). The films were annealed to various temperatures in N2 and reexamined by XRD to detect any chemical interactions between the Co1−xGax and GaAs. Films of Co1−xGax deposited with a 2% lattice mismatch (x=0.5) reacted with the substrate to produce CoGa3 at 600 °C, whereas films with no detectable mismatch (x=0.61) did not react until they had been heated to 800 °C.

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