Midinfrared “W” diode lasers with improved electrical characteristics
- 29 December 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (26) , 5374-5376
- https://doi.org/10.1063/1.1637450
Abstract
Midinfrared “W” quantum-well diode lasers with reduced turn-on voltages are reported. Devices with coated facets operated in continuous-wave mode up to 195 K, where the emission wavelength was 3.56 μm. At 78 K, the threshold current density was the maximum output power was 198 mW, and the slope efficiency was 106 mW/A.
Keywords
This publication has 15 references indexed in Scilit:
- Room temperature type-II interband cascade laserApplied Physics Letters, 2002
- Optical gain and loss in 3 μm diode “W” quantum-well lasersApplied Physics Letters, 2002
- Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room TemperatureScience, 2002
- Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 KApplied Physics Letters, 2000
- Room-temperature type-II W quantum well diode laserwith broadenedwaveguide emitting at λ = 3.30 µmElectronics Letters, 1999
- High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinkingApplied Physics Letters, 1999
- Thermal characterization of diamond-pressure-bond heat sinking for optically pumped mid-infrared lasersIEEE Journal of Quantum Electronics, 1999
- Longitudinal mode grouping in InGaAs/GaAs/AlGaAsquantum dot lasers: Origin and means of controlElectronics Letters, 1998
- Recent advances in Sb-based midwave-infrared lasersIEEE Journal of Quantum Electronics, 1997
- High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996