Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
- 19 December 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 394 (1-3) , 105-118
- https://doi.org/10.1016/s0039-6028(97)00634-1
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- A proposed structure of the nucleus for gas-source epitaxial growth of siliconSurface Science, 1997
- Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng MicroscopyPhysical Review Letters, 1997
- Self-organized growth of quantum-dot structuresSemiconductor Science and Technology, 1996
- The Effect of Strain on the Formation of Dislocations at the SiGe/Si InterfaceMRS Bulletin, 1996
- Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum DotsMRS Bulletin, 1996
- In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.Surface Science, 1996
- Island formation in Ge/Si epitaxyMaterials Science and Engineering: B, 1995
- Evolution of surface morphology and strain during SiGe epitaxyThin Solid Films, 1992
- The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on SiJournal of Crystal Growth, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990