Undetectability of the point defect as an interface state in thermal

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Abstract
The electrical activity of the electron-spin-resonance-active interfacial point defects and (unpaired Si bonds) has been examined on standard thermal . After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of samples exhibiting a distinct controlled variation, both relatively and absolutely, of the and densities. Unlike initial inference, it is found that is electrically inactive as a degrading interface state; hence it has no direct electrical influence in -based device physics. All defects, however, are found to be electrically active, putting these EPR-active defects in a unique position.