Observation of step configuration conversion on single-domain Si(001) 1×2 surface by scanning tunneling microscope
- 25 November 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (22) , 3336-3338
- https://doi.org/10.1063/1.117298
Abstract
We have observed a conversion of step configuration of 3.5° miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5° miscut Si(001) surface, terraces are spaced by double‐atom height steps and all dimer rows, either on the upper terrace or on the lower terrace of a step, are normal to the step edge, defined as single‐domain (1×2) surface. After depositing 2 ML of Ge, the surface is still single domain, but dimer rows have changed their direction, running parallel to the step edge and single domain (2×1) appeared. The reason for such conversion is attributed to the strain that existed on the epilayer of Ge.Keywords
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