Characteristics of RF injection locking of self-pulsing in an AlGaAs DH junction laser

Abstract
The minimum RF power required for injection locking of the light pulsations in the output of a CW room-temperature AlGaAs double-heterostructure (DH) junction laser was found to depend exponentially on (f-f_{r}), wherefis the RF injection frequency and fris the self-pulsing frequency, and also, to depend inversely on the self-pulsing strength of the laser. Nearly 100-percent modulation depth is achievable atf=f_{r}, and slight reduction of modulation depth occurs whenf \gg f_{r}.