A laser direct write double-level-metal technology for rapid fabrication
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 18.1/1-18.1/4
- https://doi.org/10.1109/cicc.1990.124767
Abstract
An all-dry, double-level-metal technology for personalization of VLSI gate arrays is described. The goal is to provide rapid prototyping of new electronic systems, and to serve as the nucleus for a potential job-shop, low-volume manufacturing environment. The process development is examined for the demonstration of double-level-metal interconnect, with emphasis on novel technologies such as the laser direct write and single-wafer metal etching using the magnetron-enhanced reactive-ion-etching technique. A double-level-metal interconnect based on 100000 laser patterned 2- mu m vias has been successfully demonstrated using this technology.Keywords
This publication has 1 reference indexed in Scilit:
- Laser Microchemistry and its Application to Electron-Device FabricationAnnual Review of Physical Chemistry, 1983