Counting of deep-level traps using a charge-coupled device
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (12) , 2555-2557
- https://doi.org/10.1109/t-ed.1987.23348
Abstract
Quantization in dark current generation has been observed for the first time through the use of a virtual-phase charge-coupled device. Two sites for bulk silicon dark current have been identified with capture cross sections of 1.8 × 10-15cm2and 5.4 × 10-16cm2, and concentrations of 1.3 × 109cm-3and 1.5 × 108cm-3, respectively.Keywords
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