Abstract
This paper deals with the compensation of convex corner undercutting during anisotropic etching of (100)-oriented silicon wafers in aqueous KOH with respect to micromachined devices. Several compensation structures are examined focusing on the etching of two intersecting (110)-oriented V-grooves formed by (111)-planes. A novel structure with reduced spatial requirements is shown. Using this structure, crossing V-grooves for chip separation are realized.

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