Velocity overshoot in zincblende and wurtzite GaN
- 6 May 1999
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 110 (9) , 469-472
- https://doi.org/10.1016/s0038-1098(99)00114-3
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Bandstructure effect on high-field transport in GaN and GaAlNApplied Physics Letters, 1997
- Monte Carlo calculation of velocity-field characteristics of wurtzite GaNJournal of Applied Physics, 1997
- Comparison of high field electron transport in GaN and GaAsApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Picosecond dynamics of excitons in cubic GaNPhysical Review B, 1995
- Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structureJournal of Applied Physics, 1995
- Theoretical study of electron transport in gallium nitrideJournal of Applied Physics, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975