A new three-terminal tunnel device
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (8) , 347-349
- https://doi.org/10.1109/edl.1987.26655
Abstract
A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.Keywords
This publication has 2 references indexed in Scilit:
- Trench transistor DRAM cellIEEE Electron Device Letters, 1986
- Dependence of peak current density on acceptor concentration in germanium tunnel diodesSolid-State Electronics, 1962