Enhancement of the Stark effect in coupled quantum wells for optical switching devices
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (11) , 2260-2265
- https://doi.org/10.1109/3.42054
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Coupled GaAs/AlGaAs quantum-well electroabsorption modulators for low-electric-field optical modulationJournal of Applied Physics, 1989
- Optical gain in a strained-layer quantum-well laserIEEE Journal of Quantum Electronics, 1988
- Valence-band mixing effects on the gain and the refractive index change of quantum-well lasersJournal of Applied Physics, 1988
- Effect of electric fields on excitons in a coupled double-quantum-well structurePhysical Review B, 1987
- Stark effect in AlxGa1−xAs/GaAs coupled quantum wellsApplied Physics Letters, 1987
- Theory of photoabsorption in modulation-doped semiconductor quantum wellsPhysical Review B, 1987
- Photo-luminescence studies of hot electrons and real space transfer effect in a double quantum well superlatticeSuperlattices and Microstructures, 1986
- Carrier lifetimes and localisation in coupled GaAs-GaAlAs quantum wells in high electric fieldsJournal of Physics C: Solid State Physics, 1986
- Calculations of hole subbands in semiconductor quantum wells and superlatticesPhysical Review B, 1985
- Band mixing in semiconductor superlatticesPhysical Review B, 1985