Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes

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Abstract
The nanostructure of GaN and SiC nanowires produced by carbon nanotube confined reaction has been studied by means of high-resolution electron microscopy, microanalysis, and microdiffraction. The GaN nanowire is a single crystal with fewer defects and the SiC nanowire is a β–SiC crystal with heavy layer sequence faults. Considering experimental results, a possible reaction path for making GaN is suggested.