Localized density of states in amorphous silicon determined by electrophotography
- 15 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 438-439
- https://doi.org/10.1063/1.95250
Abstract
We report that the distribution of localized density of states g(E) for hydrogenated amorphous silicon can be estimated by the electrophotographic (xerographic) method. The density of states near midgap can be evaluated to be about 1×1016 cm−3 eV−1 for undoped films. The general trend and the shape of g(E) are similar to those obtained by the deep level transient spectroscopy and the photothermal deflection spectroscopy.Keywords
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