Electrorefraction In Semiconductor Quantum Wells
- 9 February 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 142-147
- https://doi.org/10.1117/12.960121
Abstract
We have measured electric-field-induced changes in refractive index in GaAs- and InP-based quantum well heterostructures. Excitonic effects provide index changes one to two orders of magnitude larger than in corresponding bulk semiconductors. This enhancement can be applied to low-voltage, compact devices for electro-optic phase modulation.Keywords
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