Optical properties of dense thin-film Si and Ge prepared by ion-beam sputtering
- 15 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 954-957
- https://doi.org/10.1063/1.336172
Abstract
The optical properties of ion-beam-sputtered Si and Ge have been measured using spectroscopic ellipsometry over the range of 2.5–5.0 eV. Measurements have been performed on films prepared at different substrate temperatures (Ts) . An analysis of the spectroscopic ellipsometry data using the Bruggeman effective medium approximation reveals that very dense polycrystalline Si ( p-Si) and Ge ( p-Ge) films are obtained (without postdeposition heat treatment) for Ts ≥350 °C and Ts ≥200 °C, respectively. Maintaining a sufficiently high Ar beam voltage in the sputtering process is shown to be beneficial to the densification of p-Si. Discrepancies observed between the structure of the p-Si deduced from Raman and ellipsometry spectra are also addressed. The ellipsometry data are effective in detecting heterogeneity possibly due to surface roughness for the p-Ge.This publication has 10 references indexed in Scilit:
- An ellipsometry study of a hydrogenated amorphous silicon based n-i structureJournal of Applied Physics, 1985
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloysApplied Physics Letters, 1982
- Errors in “Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometers”Journal of the Optical Society of America, 1981
- Microstructural Information From Optical Properties In Semiconductor TechnologyPublished by SPIE-Intl Soc Optical Eng ,1981
- Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eVApplied Physics Letters, 1981
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974
- Amorphous germanium III. Optical propertiesAdvances in Physics, 1973