Interfacial reaction in MOS structures
- 1 January 1976
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 13 (1) , 55-57
- https://doi.org/10.1116/1.568952
Abstract
The kinetics of the reduction of SiO2 in Au/SiO2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au–Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions. The rate of reduction of the oxide proceeds with an activation energy of approximately 26 kcal/mole.Keywords
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